Abstract: In this paper, we present a study on a retention characteristics dependent on a high-$\kappa $ gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer.

This project consists of a simple implementation of a stack in C++. A stack is a data structure that follows the "Last In, First Out" (LIFO) principle, where the last element added is the first to be ...

This project is a simple implementation of a stack in PHP. A stack is a data structure that follows the "last in, first out" (LIFO) principle, where the last element added is the first to be removed.

Abstract: In this work, we demonstrate a top-gate indium-zinc oxide (IZO) transistor with non-ferroelectric HfO2 gate stack but exhibiting a counterclockwise hysteresis loop with large memory window ...