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Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Semiconductor Engineering

One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes

New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...
Hosted on MSN

Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around design

It is close to impossible to get into a Chinese semiconductor laboratory, but Chinese scientists are inclined to share the results of their work. Thus, our colleagues from TechXplore have found a ...
Ars Technica

A transistor made using two atomically thin materials sets size record

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...