Using this technique, we have successfully manufactured an upright-type double-gate MOS transistor capable of ultra-large scale integration, and its performance is 30% better than that of transistors ...

A transistor made using two atomically thin materials sets size record A key transistor component is made from the edge of a sheet of graphene.

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

PORTLAND, Ore. — Electronics devices using ferroelectric transistors would turn on instantly without the need to boot from flash or hard-disk memories. Such ferroelectric transistors would likely use ...

Intel announces a major technical breakthrough and historic innovation in microprocessors: the world's first 3-D transistors, called Tri-Gate, in a production technology. The transition to 3-D ...

The transistor uses metal, but instead of a semiconductor channel — which is packed with atoms that cause collisions as electrons flow through the channel — the new device uses an air gap.

World’s First Demonstration of 22nm 3-D Tri-Gate Transistors The 3-D Tri-Gate transistor will be implemented in the company’s upcoming manufacturing process, called the 22nm node, in reference to the ...

Motorola today announced a transistor technology aimed at propping up Moore's Law for a while longer, announcing the creation of a transistor gate structure that allows for the equivalent of two ...