Electronics Weekly

LETI integrates III-V lasers on 200mm wafers using CMOS flow

Leti has integrated hybrid III-V silicon lasers on 200mm wafers using standard CMOS process flow. This shows the way to transitioning away from 100mm wafers and a process based on bulk III-V ...
Finanznachrichten

Radiation Hardened SRAM Designed by RedCat Devices and Fabricated in TowerJazz's 0.18um Process Flow Withstands 15 Mrad Total Ionization Dose

MIGDAL HAEMEK, Israel and MILAN, Italy, June 25, 2012 /PRNewswire/ --RedCat Devices, a fabless company specializing in the development of radiation hard (rad-hard) components for civilian and special ...
Design-Reuse

Radiation Hardened SRAM Designed by RedCat Devices and Fabricated in TowerJazz's 0.18um Process Flow Withstands 15 Mrad Total Ionization Dose

Developed technology in TowerJazz commercial foundry opens multi-billion markets requiring specific components able to withstand high dose radiation Applications include electronics for communication, ...
EDN

Performance grows with integration

The manufacturing process flow has been designed to allow all standard CMOS steps to occur at the front end of the process, with the micromachining steps performed after the circuitry is completed.
sciencex

Towards a process flow for monolithic CFET transistor architectures

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...
New Electronics

IMEC makes progress on cmos scaling

Belgian research centre IMEC has achieved 'promising results' in its work to scale cmos to the 22nm process node and beyond. The centre says its transistor scaling programs have shown a successful ...
EDN

X-Fab, Cadence Team on Low-Power Analog/Mixed-Signal CMOS Flow

To provide low-power CMOS application designers with a smooth path from design through physical implementation, and shorter design cycle times, Erfurt, Germany-based analog/mixed-signal foundry X-Fab ...
Nanowerk

Promising results in the race to scale CMOS to 22nm and below

(Nanowerk News) IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the ...
Electronic Design

IEDM sees transistor, memory, laser innovations

The International Electron Devices Meeting (IEDM) held Dec. 2-6, 2017, in San Francisco offered imec and Leti an opportunity to disclose several innovations. imec announced three new developments: ...
Nanowerk

IMEC reports progress on simplified high-k/metal gate process for the 32nm node

(Nanowerk News) At today's VLSI Symposium, IMEC reports an improved performance for its planar CMOS using hafnium-based high-k dielectrics and tantalum-based metal gates for the 32nm CMOS node. The ...
Electronics Weekly

First CMOS microphone improves sound quality in mobiles

The quality of sound recording in consumer devices could soon be improved with a high quality microphone based on very low cost CMOS device technology. Acoustic silicon specialist Akustica is working ...
Design-Reuse

X-FAB Partners With Akustica to Deliver World's First CMOS MEMS Single-Chip Microphones

X-FAB to Provide Foundry Services for Akustica's Family of CMOS MEMS Silicon Microphone Chips ERFURT, GERMANY and PITTSBURGH, PA -- May 31, 2006 -- Akustica, Inc., a pioneer in acoustic system-on-chip ...