Electronics Weekly

LETI integrates III-V lasers on 200mm wafers using CMOS flow

Leti has integrated hybrid III-V silicon lasers on 200mm wafers using standard CMOS process flow. This shows the way to transitioning away from 100mm wafers and a process based on bulk III-V ...
EDN

Performance grows with integration

The manufacturing process flow has been designed to allow all standard CMOS steps to occur at the front end of the process, with the micromachining steps performed after the circuitry is completed.
EDN

Mixed-signal design flow enables RF CMOS chip

Spirea AB is a Swedish fabless semiconductor company developing highly integrated low-power, low-cost radio solutions for the Wireless LAN and PAN markets. This article describes how we assembled a ...
Electronics Weekly

CMOS will cut cost of integrated photonics, says Leti

French research group Leti has demonstrated a III-V semiconductor fabrication technique which it says will simplify the production of lasers. Leti says it has integrated hybrid III-V silicon lasers on ...
Electronic Specifier

Cambridge GaN Devices partners with GlobalFoundries to ramp up production of single-chip power technology

Cambridge GaN Devices (CGD) has entered a manufacturing partnership with GlobalFoundries (GF) to produce its ICeGaN power ...
Design-Reuse

Radiation Hardened SRAM Designed by RedCat Devices and Fabricated in TowerJazz's 0.18um Process Flow Withstands 15 Mrad Total Ionization Dose

Developed technology in TowerJazz commercial foundry opens multi-billion markets requiring specific components able to withstand high dose radiation Applications include electronics for communication, ...
Finanznachrichten

Radiation Hardened SRAM Designed by RedCat Devices and Fabricated in TowerJazz's 0.18um Process Flow Withstands 15 Mrad Total Ionization Dose

MIGDAL HAEMEK, Israel and MILAN, Italy, June 25, 2012 /PRNewswire/ --RedCat Devices, a fabless company specializing in the development of radiation hard (rad-hard) components for civilian and special ...