San Francisco After months of intense and reportedly often heated debate, the Compact Model Council has selected a new industry standard CMOS transistor model. Jointly developed by Pennsylvania State ...

(i) Device Physics Intuition for System-Level Optimization: Developed a strong, evidence-based intuition for how fundamental transistor parameters (Vt, gm, leakage, capacitance) directly influence ...

We have successfully demonstrated the III-V/Ge CMOS transistors with InGaAs n-channel and Ge p-channels integrated on the one wafer by direct wafer bonding (DWB) for the first time. The mobilities of ...

This repository contains my notes, lab exercises, and SPICE simulations from a 5-day workshop [11 August 2025 to 20 August 2025] on CMOS inverter design using the SKY 130nm PDK.

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...

Abstract: Transistor tapering is a widely used technique applied to optimize the geometries of CMOS transistors in high-performance circuit design with a view to minimizing the delay of a FET network.

Abstract: Emerging die-level stress effects (i.e. NBTI, HCI, TDDB, etc.) in nanometer CMOS technologies cause both analog and digital circuit parameters to degrade over time. To efficiently evaluate ...

The most widely used integrated circuit (IC) technology. Although the term CMOS "transistor" is widely used, it is somewhat misleading because in order to reduce power consumption, CMOS is actually ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

Heat is widely recognized as the enemy of sensitive electronic components, but ultra-low temperatures can also pose serious performance challenges. Now, SemiQon, a Finland-based company focused on ...