Power Integrations launches gate drivers for 62 mm SiC and IGBT modules with fast short-circuit protection, rated for 1200 V and 1700 V applications.

Toshiba's new compact gate driver IC for three-phase brushless DC motors offers the minimized functions for diverse automotive applications.

Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for ...

Isolated Gate Driver IC Optimized for driving 600V-class high-voltage GaN HEMTs Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the ...