SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 20, 2004--MoSys, Inc., (Nasdaq:MOSY) the industry's leading provider of high density SoC embedded memory solutions, announced today that Lantronix(R), Inc., a ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 13, 2003--MoSys, Inc. (NASDAQ:MOSY) the industry's leading provider of high density SoC embedded memory solutions, and UMC (NYSE:UMC), a world-leading ...
UK start up sureCore has taped out its low power sram IP demonstrator chip in STMicroelectronics' 28nm Fully Depleted Silicon-on-Insulator (FDSOI) process. The device is designed to significantly ...
WASHINGTON (dpa-AFX) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This ...
MSNలో హోస్ట్ చేయబడింది
Faster than SRAM! New flash memory tech from China is millions of times faster than NAND rivals from US, Japan or Korea - but please change its name
Chinese researchers have developed super-fast non volatile flash memory Graphene channel enables 400 picosecond write speed and persistent storage "PoX" device targets AI bottlenecks with low power, ...
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