The insulated gate bipolar transistors (IGBTs) combines an easily driven MOS gate and low conduction loss, and is quickly displacing power bipolar transistors as the device of choice for high current ...
Abstract: This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel ...
Abstract: During the periodical turn-on and turn-off of the IGBT module, the voltage across the IGBT module and the current flowing through it will change rapidly, causing electromagnetic interference ...
For inverter applications, such as motor drives, uninterruptible power supplies, switchmode power supplies, high intensity lamp ballasts, and induction heating, the gates of insulated gate bipolar ...
Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...
An advanced 1.0 A dual output, intelligent IGBT gate drive optocoupler maximizes gate drive design scalability for motor control and power conversion applications ranging from low to high power ...
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