This circuit is a common-source amplifier made using both a PMOS (M2) and NMOS (M1) transistor. The main components are: VDD (Supply Voltage): 1.8V Input Signals (V1 and V2): V1: 0.48V peak sine wave, ...
Abstract: A simple circuit consisting of an nMOS transistor in parallel with a pMOS transistor is shown to reduce nonlinear distortion. Measured experimental results show more than 10 dB reduction in ...
Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
Abstract: An SPDT switch consisting of both nMOS and pMOS transistors is presented. Compared with conventional SPDT switches using only nMOS transistors under the same bias condition, the proposed ...
For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
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