This circuit is a common-source amplifier made using both a PMOS (M2) and NMOS (M1) transistor. The main components are: VDD (Supply Voltage): 1.8V Input Signals (V1 and V2): V1: 0.48V peak sine wave, ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

Abstract: An SPDT switch consisting of both nMOS and pMOS transistors is presented. Compared with conventional SPDT switches using only nMOS transistors under the same bias condition, the proposed ...

This repository contains the design and simulation of NOT, OR, AND, NAND, and NOR logic gates using PMOS, NMOS, and CMOS transistors in LTspice XVII. It demonstrates how basic and universal logic ...

Abstract: The amount of irradiation SET injected charge into both the straight and ELT 340nm NMOS and PMOS transistor of a 180 nm Mixed-Mode CMOS technology has been measured. The radiation source has ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...