PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
Washington, D.C. — Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...
The Nature Index 2024 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
The company offers a glimpse at how it envisions upgrading chip designs after 2025. To create even faster CPUs, Intel is researching stacking “multiple” transistors on top of each to raise the chip ...
X-FAB, the analogue/mixed-signal and specialty foundry, has announced the availability of new medium-voltage transistors – complementing the company’s 180nm BCD-on-SOI technology platform. These ...
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