Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...

Abstract: 3D NAND technology is expected to continue advancing toward 1000-layer stacking in pursuit of ever-higher memory density per chip [1]. However, increasing the number of layers presents ...

SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of "3D ...

Abstract: In SONOS 3D NAND, if the string select transistor (SST) and the ground select transistor (GST) use memory cell's trapping dielectric as their gate dielectrics, they could suffer abnormal Vt ...

Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...

Scanning electron microscope imagery shows the magnetic "islands" of a new chip design. The islands are impervious to power loss. View Slideshow For the first time, researchers have created a working ...

The NAND flash technology that Toshiba introduced in 1989, making thumb drives, SSDs and your smartphone’s memory possible, has finally reached a development dead end. Toshiba and other major ...