In 5nm and 7nm nodes, the source/drain contact area of the transistors is so small that the contact resistance threatens to result in suboptimal transistor functioning. Researchers have therefore been ...

Onderzoekers hebben een reeks transistors gebouwd die dankzij quantummechanische effecten beter presteren dan op grond van de klassieke natuurkunde te verwachten zou zijn. Zo wordt de Wet van Moore ...

Washington, D.C. &#151 Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...

X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

TMSC's HPL NMOS and PMOS transistors, as seen in the Kintex-7 FPGA, are shown below. The two transistors are made using a gate-last process, where the TiN/HfO2/oxide gate dielectric is first deposited ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm ...