The aim of this project is to design and simulate a complementary metal-oxide-semiconductor (CMOS) circuit using both NMOS (N-channel metal-oxide-semiconductor) and PMOS (P-channel ...
Developed a high-performance DCO using stacked inverters and PMOS varactors, enhancing power efficiency and frequency stability for modern communication systems. The demand for improved signal ...
In 5nm and 7nm nodes, the source/drain contact area of the transistors is so small that the contact resistance threatens to result in suboptimal transistor functioning. Researchers have therefore been ...
A TFT LCD panel requires three voltages: VDD, VON, and VOFF. VDD, typically 13 V, powers the video signal path. VON, usually 25 V, supplies the turn-on gate drive bias voltage for the TFT cell.
Abstract: A new failure mechanism of P-channel metal oxide semiconductor (PMOS) transistor threshold voltage (Vth) shift due to unintentional N-type doping onto silicon wafer from wafer fab ...
From simple transistors to complex systems, this article explains the building blocks of digital logic design. Learn how these powerful components work in parallel to process information at incredible ...