Recent studies have shown that by adapting high-k gate dielectric, deep sub-micron MOSFET suffers short channel effect caused by the fringing electric fields from gate to source/drain regions. In this ...

To overcome the performance degradation due to underlap in Stack Gate Oxide Tunnel Field Effect Transistors is the most crucial issue. Thus to ameliorate the performance of stack gate-oxide tunnel ...

The ultra-thin, high-k, Ge gate stack and strontium germanide (SrGex) interlayer can provide the high carrier mobility needed for application in MISFETs at the 16-nm node and beyond.