Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
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Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around design
It is close to impossible to get into a Chinese semiconductor laboratory, but Chinese scientists are inclined to share the results of their work. Thus, our colleagues from TechXplore have found a ...
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