News
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Hosted on MSN1y
Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around design
It is close to impossible to get into a Chinese semiconductor laboratory, but Chinese scientists are inclined to share the results of their work. Thus, our colleagues from TechXplore have found a ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback