Abstract: We present a compendium of generalized expressions for the low-frequency voltage gain and terminal impedances of each of the three fundamental bipolar-amplifier topologies (i.e., common ...

This expository manuscript presents generalized expressions for the low-frequency voltage gain and terminal impedances of each of the three fundamental bipolar-amplifier topologies (i.e., common ...

We’ve previously remarked upon a generation lucky enough to be well-versed in microcontrollers and computersised electronics through being brought up on the Arduino or the Raspberry Pi but unlucky ...

Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.

IT is well known that changes in the d.c. characteristics of transistor amplifiers with temperature are particularly severe, and tend to limit the range over which these devices can operate. The d.c.

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...