Drain current (IDS) versus drain–source voltage (VDS) relations (Fig. 2a) at various gate voltages (VGS) for a NW-TFT show typical accumulation mode p-channel transistor behaviour 18, as IDS ...

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions.

First Transistor Using Nanotechnology Is 50 Times More Energy Efficient Than Current Models Date: April 26, 2008 Source: Lund University Summary: Transistors are an indispensable building block in ...

The use of the latter diamond layer significantly reduced source and drain contact resistance. The team confirmed that the fabricated diamond MOSFET actually functioned as an n-channel transistor.

2D transistor offering 40% faster speeds and lower energy use may soon disrupt the global chip market - if China can successfully scale production.

For current sourcing, you need an amplifier whose CM range and output go approximately to the positive rail, and you need PNP transistors.