Tech Xplore on MSN
Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, ...
Interesting Engineering on MSN
World’s first 2D-silicon hybrid flash chip achieves record speed and 94% memory yield
The race for faster, more efficient chips has reached a new milestone. Scientists at Shanghai’s Fudan University have unveiled the world’s first full-featured 2D flash chip, an engineering feat that ...
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