Leveraging lightning-fast technology already familiar to many from the micro storage world of digital cameras, thumb drives and laptop computers, the San Diego Supercomputer Center (SDSC) at the ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride. To ...

An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these ...

In a world fixated on the race for superior artificial intelligence (AI), Chinese scientists have cracked the code to memory speeds once deemed impossible – with a device smaller than a grain of rice.

A pioneering type of patented computer memory known as ULTRARAM™ has been demonstrated on silicon wafers in what is a major step towards its large-scale manufacture. ULTRARAM™ is novel type of memory ...